Effect of surfactant Sb on carrier lifetime in GaInP epilayers
Identifieur interne : 00E648 ( Main/Repository ); précédent : 00E647; suivant : 00E649Effect of surfactant Sb on carrier lifetime in GaInP epilayers
Auteurs : RBID : Pascal:02-0054120Descripteurs français
- Pascal (Inist)
- 7361E, 7855C, 7866F, 7155E, 7280E, 7220J, 7350G, 7847, 7135, Etude expérimentale, Gallium composé, Indium composé, Semiconducteur III-V, Antimoine, Agent surface, Durée vie porteur charge, Photoluminescence, Couche épitaxique semiconductrice, Spectre résolution temporelle, Etat impureté, Bande interdite, Exciton.
- Wicri :
- concept : Antimoine.
English descriptors
- KwdEn :
Abstract
Samples of Ga0.52In0.48P grown on (001) GaAs with small amounts of surfactant Sb were investigated using time-resolved photoluminescence. All samples show a luminescence that may be fit to a two-stage exponential decay with a fast and a slow lifetime. For growth without Sb (Sb/III(v)=0), the sample shows a strong CuPtB ordering and a fast component lifetime of 7 ns. As the Sb concentration is increased, the degree of order is reduced, with a consequent increase in band gap energy. In the highest band gap material, produced at Sb/III(v)=0.016, the fast lifetime is 2.9 ns, an order of magnitude larger than published values for GaInP disordered by misorienting the substrate. Increasing the Sb further causes the band gap energy to decrease due to the onset of composition modulation. At Sb/III(v)=0.064, the fast component lifetime decreases to 0.79 ns. Samples grown with Sb/III(v)>0.016 show a lifetime that depends on energy and is fit well by a model of localized excitons. © 2002 American Institute of Physics.
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<record><TEI><teiHeader><fileDesc><titleStmt><title xml:lang="en" level="a">Effect of surfactant Sb on carrier lifetime in GaInP epilayers</title><author><name sortKey="Fetzer, C M" uniqKey="Fetzer C">C. M. Fetzer</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Lee, R T" uniqKey="Lee R">R. T. Lee</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Stringfellow, G B" uniqKey="Stringfellow G">G. B. Stringfellow</name><affiliation wicri:level="2"><inist:fA14 i1="01"><s1>College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">États-Unis</country><placeName><region type="state">Utah</region></placeName><wicri:cityArea>College of Engineering, University of Utah, Salt Lake City</wicri:cityArea></affiliation></author><author><name sortKey="Liu, X Q" uniqKey="Liu X">X. Q. Liu</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa 572-8530, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa 572-8530</wicri:regionArea><wicri:noRegion>Neyagawa 572-8530</wicri:noRegion></affiliation></author><author><name sortKey="Sasaki, A" uniqKey="Sasaki A">A. Sasaki</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa 572-8530, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa 572-8530</wicri:regionArea><wicri:noRegion>Neyagawa 572-8530</wicri:noRegion></affiliation></author><author><name sortKey="Ohno, N" uniqKey="Ohno N">N. Ohno</name><affiliation wicri:level="1"><inist:fA14 i1="02"><s1>Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa 572-8530, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></inist:fA14><country xml:lang="fr">Japon</country><wicri:regionArea>Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa 572-8530</wicri:regionArea><wicri:noRegion>Neyagawa 572-8530</wicri:noRegion></affiliation></author></titleStmt><publicationStmt><idno type="inist">02-0054120</idno><date when="2002-01-01">2002-01-01</date><idno type="stanalyst">PASCAL 02-0054120 AIP</idno><idno type="RBID">Pascal:02-0054120</idno><idno type="wicri:Area/Main/Corpus">00FF48</idno><idno type="wicri:Area/Main/Repository">00E648</idno></publicationStmt><seriesStmt><idno type="ISSN">0021-8979</idno><title level="j" type="abbreviated">J. appl. phys.</title><title level="j" type="main">Journal of applied physics</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Antimony</term><term>Carrier lifetime</term><term>Energy gap</term><term>Excitons</term><term>Experimental study</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Impurity states</term><term>Indium compounds</term><term>Photoluminescence</term><term>Semiconductor epitaxial layers</term><term>Surfactants</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7361E</term><term>7855C</term><term>7866F</term><term>7155E</term><term>7280E</term><term>7220J</term><term>7350G</term><term>7847</term><term>7135</term><term>Etude expérimentale</term><term>Gallium composé</term><term>Indium composé</term><term>Semiconducteur III-V</term><term>Antimoine</term><term>Agent surface</term><term>Durée vie porteur charge</term><term>Photoluminescence</term><term>Couche épitaxique semiconductrice</term><term>Spectre résolution temporelle</term><term>Etat impureté</term><term>Bande interdite</term><term>Exciton</term></keywords><keywords scheme="Wicri" type="concept" xml:lang="fr"><term>Antimoine</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">Samples of Ga<sub>0.52</sub>In<sub>0.48</sub>P grown on (001) GaAs with small amounts of surfactant Sb were investigated using time-resolved photoluminescence. All samples show a luminescence that may be fit to a two-stage exponential decay with a fast and a slow lifetime. For growth without Sb (Sb/III(v)=0), the sample shows a strong CuPt<sub>B</sub> ordering and a fast component lifetime of 7 ns. As the Sb concentration is increased, the degree of order is reduced, with a consequent increase in band gap energy. In the highest band gap material, produced at Sb/III(v)=0.016, the fast lifetime is 2.9 ns, an order of magnitude larger than published values for GaInP disordered by misorienting the substrate. Increasing the Sb further causes the band gap energy to decrease due to the onset of composition modulation. At Sb/III(v)=0.064, the fast component lifetime decreases to 0.79 ns. Samples grown with Sb/III(v)>0.016 show a lifetime that depends on energy and is fit well by a model of localized excitons. © 2002 American Institute of Physics.</div></front></TEI><inist><standard h6="B"><pA><fA01 i1="01" i2="1"><s0>0021-8979</s0></fA01><fA02 i1="01"><s0>JAPIAU</s0></fA02><fA03 i2="1"><s0>J. appl. phys.</s0></fA03><fA05><s2>91</s2></fA05><fA06><s2>1</s2></fA06><fA08 i1="01" i2="1" l="ENG"><s1>Effect of surfactant Sb on carrier lifetime in GaInP epilayers</s1></fA08><fA11 i1="01" i2="1"><s1>FETZER (C. M.)</s1></fA11><fA11 i1="02" i2="1"><s1>LEE (R. T.)</s1></fA11><fA11 i1="03" i2="1"><s1>STRINGFELLOW (G. B.)</s1></fA11><fA11 i1="04" i2="1"><s1>LIU (X. Q.)</s1></fA11><fA11 i1="05" i2="1"><s1>SASAKI (A.)</s1></fA11><fA11 i1="06" i2="1"><s1>OHNO (N.)</s1></fA11><fA14 i1="01"><s1>College of Engineering, University of Utah, Salt Lake City, Utah 84112</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></fA14><fA14 i1="02"><s1>Academic Frontier Promotion Center, Osaka Electro-Communication University, Neyagawa 572-8530, Japan</s1><sZ>4 aut.</sZ><sZ>5 aut.</sZ><sZ>6 aut.</sZ></fA14><fA20><s1>199-203</s1></fA20><fA21><s1>2002-01-01</s1></fA21><fA23 i1="01"><s0>ENG</s0></fA23><fA43 i1="01"><s1>INIST</s1><s2>126</s2></fA43><fA44><s0>8100</s0><s1>© 2002 American Institute of Physics. All rights reserved.</s1></fA44><fA47 i1="01" i2="1"><s0>02-0054120</s0></fA47><fA60><s1>P</s1></fA60><fA61><s0>A</s0></fA61><fA64 i1="01" i2="1"><s0>Journal of applied physics</s0></fA64><fA66 i1="01"><s0>USA</s0></fA66><fC01 i1="01" l="ENG"><s0>Samples of Ga<sub>0.52</sub>In<sub>0.48</sub>P grown on (001) GaAs with small amounts of surfactant Sb were investigated using time-resolved photoluminescence. All samples show a luminescence that may be fit to a two-stage exponential decay with a fast and a slow lifetime. For growth without Sb (Sb/III(v)=0), the sample shows a strong CuPt<sub>B</sub> ordering and a fast component lifetime of 7 ns. As the Sb concentration is increased, the degree of order is reduced, with a consequent increase in band gap energy. In the highest band gap material, produced at Sb/III(v)=0.016, the fast lifetime is 2.9 ns, an order of magnitude larger than published values for GaInP disordered by misorienting the substrate. Increasing the Sb further causes the band gap energy to decrease due to the onset of composition modulation. At Sb/III(v)=0.064, the fast component lifetime decreases to 0.79 ns. Samples grown with Sb/III(v)>0.016 show a lifetime that depends on energy and is fit well by a model of localized excitons. © 2002 American Institute of Physics.</s0></fC01><fC02 i1="01" i2="3"><s0>001B70C61E</s0></fC02><fC02 i1="02" i2="3"><s0>001B70H55C</s0></fC02><fC02 i1="03" i2="3"><s0>001B70H66F</s0></fC02><fC02 i1="04" i2="3"><s0>001B70A55E</s0></fC02><fC02 i1="05" i2="3"><s0>001B70B80E</s0></fC02><fC02 i1="06" i2="3"><s0>001B70B20J</s0></fC02><fC02 i1="07" i2="3"><s0>001B70C50G</s0></fC02><fC02 i1="08" i2="3"><s0>001B70H47</s0></fC02><fC02 i1="09" i2="3"><s0>001B70A35</s0></fC02><fC03 i1="01" i2="3" l="FRE"><s0>7361E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="02" i2="3" l="FRE"><s0>7855C</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="03" i2="3" l="FRE"><s0>7866F</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="04" i2="3" l="FRE"><s0>7155E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="05" i2="3" l="FRE"><s0>7280E</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="06" i2="3" l="FRE"><s0>7220J</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="07" i2="3" l="FRE"><s0>7350G</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="08" i2="3" l="FRE"><s0>7847</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="09" i2="3" l="FRE"><s0>7135</s0><s2>PAC</s2><s4>INC</s4></fC03><fC03 i1="10" i2="3" l="FRE"><s0>Etude expérimentale</s0></fC03><fC03 i1="10" i2="3" l="ENG"><s0>Experimental study</s0></fC03><fC03 i1="11" i2="3" l="FRE"><s0>Gallium composé</s0></fC03><fC03 i1="11" i2="3" l="ENG"><s0>Gallium compounds</s0></fC03><fC03 i1="12" i2="3" l="FRE"><s0>Indium composé</s0></fC03><fC03 i1="12" i2="3" l="ENG"><s0>Indium compounds</s0></fC03><fC03 i1="13" i2="3" l="FRE"><s0>Semiconducteur III-V</s0></fC03><fC03 i1="13" i2="3" l="ENG"><s0>III-V semiconductors</s0></fC03><fC03 i1="14" i2="3" l="FRE"><s0>Antimoine</s0><s2>NC</s2></fC03><fC03 i1="14" i2="3" l="ENG"><s0>Antimony</s0><s2>NC</s2></fC03><fC03 i1="15" i2="3" l="FRE"><s0>Agent surface</s0></fC03><fC03 i1="15" i2="3" l="ENG"><s0>Surfactants</s0></fC03><fC03 i1="16" i2="3" l="FRE"><s0>Durée vie porteur charge</s0></fC03><fC03 i1="16" i2="3" l="ENG"><s0>Carrier lifetime</s0></fC03><fC03 i1="17" i2="3" l="FRE"><s0>Photoluminescence</s0></fC03><fC03 i1="17" i2="3" l="ENG"><s0>Photoluminescence</s0></fC03><fC03 i1="18" i2="3" l="FRE"><s0>Couche épitaxique semiconductrice</s0></fC03><fC03 i1="18" i2="3" l="ENG"><s0>Semiconductor epitaxial layers</s0></fC03><fC03 i1="19" i2="3" l="FRE"><s0>Spectre résolution temporelle</s0></fC03><fC03 i1="19" i2="3" l="ENG"><s0>Time resolved spectra</s0></fC03><fC03 i1="20" i2="3" l="FRE"><s0>Etat impureté</s0></fC03><fC03 i1="20" i2="3" l="ENG"><s0>Impurity states</s0></fC03><fC03 i1="21" i2="3" l="FRE"><s0>Bande interdite</s0></fC03><fC03 i1="21" i2="3" l="ENG"><s0>Energy gap</s0></fC03><fC03 i1="22" i2="3" l="FRE"><s0>Exciton</s0></fC03><fC03 i1="22" i2="3" l="ENG"><s0>Excitons</s0></fC03><fN21><s1>021</s1></fN21><fN47 i1="01" i2="1"><s0>0201M000789</s0></fN47></pA></standard></inist></record>Pour manipuler ce document sous Unix (Dilib)
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